MRF6P23190HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
?21
?15
?16
?19
2430
2270
IRL
Gps
13
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout
= 40 Watts Avg.
2410
2390
2370
2350
2330
2310
2290
14.4
?44
25
24
23
22
?38
?40
η
D
, DRAIN
EFFICIENCY (%)
14.2
14
13.8
13.6
13.4
13.2
?42
?36
?18
12.8
?13
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
?19
?13
?15
?18
2430
2270
IRL
12.6
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout
= 80 Watts Avg.
2410
2390
2370
2350
2330
2310
2290
14
?34
35
34
32
31
?28
?30
?32
η
D
, DRAIN
EFFICIENCY (%)
13.8
13.6
13.4
13.2
13
12.8
?26
?16
12.4
?12
Figure 5. Two-Tone Power Gain versus
Output Power
10
10
16
1
IDQ
= 2850 mA
2375 mA
Pout, OUTPUT POWER (WATTS) PEP
500
G
ps
, POWER GAIN (dB)
15
14
12
950 mA
13
100
VDD
= 28 Vdc, f1 = 2345 MHz, f2 = 2355
MHz
Two?Tone Measurements, 10 MHz Tone Spacing
11
Figure 6. Third Order Intermodulation Distortion
versus Output Power
?10
0.5 500110100
?20
?30
?40
?70
?50
Pout, OUTPUT POWER (WATTS) PEP
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
VDD
= 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
0.5
1900 mA
1425 mA
IDQ
= 950 mA
2375 mA
1900 mA
1425 mA
2850 mA
?60
VDD= 28 Vdc, Pout
= 40 W (Avg.), I
DQ
= 1900 mA
2?Carrier W?CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
VDD= 28 Vdc, Pout
= 80 W (Avg.), I
DQ
= 1900 mA
2?Carrier W?CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
ηD
Gps
ηD
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